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姜丹丹 副教授

发布时间:2015-07-03 作者: 点击:[]

硕士生导师 姜丹丹 简介



【个人简介】

    姜丹丹,女,副教授,博士(后)学历,博士学位。中科院微电子研究所与安徽大学联合培养电路与系统专业博士,中国科学院微电子研究所三维存储器研发中心博士后,曾参与过“863”“973”、国家自然科学基金、国家集成电路大基金等多项课题。个人先后主持国家自然科学基金项目1项四川省教育厅项目1项,博士后基金项目1项,,四川省科技项目1项,横向课题3项。在国内外期 刊上发表论文 10 余 篇 , 其 中 发 表 在 《Electron Device Letters, IEEE》, 《Nanotechnology》等知名期刊上的研究成果具有重要的源头创新意义。已获授权发明专利 4项。


【研究方向】

1. 通信专用集成电路与微电子系统

2. SOC/SIP系统芯片封装及测试技术

3. 集成电路制造技术

4. 射频/微波/毫米波集成电路与系统

5. 电子信息材料与射频集成器件

主持及主研项目

1.面向5G应用的硅基毫米波收发集成芯片研究
2. 面向5G应用的CMOS毫米波大功率多模功率放大器芯片研究
3. 24GHz CMOS功率放大器芯片IP开发
4. 应用于物联网的射频收发芯片

【发表论文】

1. Xingqi Zou , Lei Jin, Dandan Jiang*, Yu Zhang , Guoxing Chen, and Zongliang Huo*,Investigation of Cycling-Induced Dummy Cell Disturbance in 3D NAND Flash Memory,IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, FEBRUARY 2018,通讯作者   SCI二区

2. Yu Zhang , Lei Jin , Dandan Jiang , Xingqi Zou , Zhiguo Zhao , Jing Gao , Ming Zeng ,Wenbin Zhou, Zhaoyun Tang , Zongliang Huo*, Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash,Solid State Electronics,141,2018,通讯作者   SCI三区

3. Yu Zhang , Lei Jin, Dandan Jiang*, Xingqi Zou , Hongtao Liu, and Zongliang Huo*,A Novel Read Scheme for Read Disturbance Suppression in 3D NAND Flash Memory,IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 12, DECEMBER 2017   通讯作者   SCI二区

4.Dandan Jiang, Lei Jin,et al., Investigation of tunneling layer and inter-gate-dielectric engineered TaN floating gate memory, Integrated Ferroelectrics, Vol. 169, 2016, pp.146-152 SCI

5.Dandan Jiang, Lei Jin,et al., A quantitatively approach to characterize total ionizing dose effect of periphery device for 65 nm flash memory,Nanoscience and Nanotechnology Letters, In press  SCI

6. Dandan Jiang, Lei Jin, et al., Performance Enhancement of Metal Floating Gate Memory By Using a Bandgap Engineered High-k Tunneling Barrier, ECS Transactions, 72 (2), 2016, pp.51-55  EI

7. Dandan Jiang, Zhiliang Xia, Jin Lei, et al., Analysis of the Retention Characteristic in Three dimensional Junction-less Charge Trapping Memory, ECS Transactions, 72 (4), 2016, pp. 233-238  EI

8. Dandan Jiang, Zhiliang Xia, Jin Lei, et al., Impact of Critical Geometry Dimension on Channel Boosting Potential in 3D NAND Memory, 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology, P1-090, 2016  EI

9. Xingqi Zou, Zhiliang Xia, Lei Jin, Yu Zhang, Dandan Jiang, et al.,Simulation On Threshold Voltage Of L-Shaped Bottom Select Transistor In 3D NANDFlash Memory,2016 IEEE 13th  International Conference on Solid-State and Integrated Circuit Technology, P1-050, 2016  EI

10. Yu Zhang, Lei Jin, Zhiliang Xia, Dandan Jiang, et al., String Select Transistor Leakage Suppression By Threshold Voltage Modulation In 3DNAND Flash Memory, 2016 IEEE 13th  International Conference on Solid-State and Integrated Circuit Technology, S56-6, 2016  EI

11. Li Xinkai(李新开)、*Huo Zongliang(霍宗亮)、Jin Lei(靳磊)、Jiang Dandan(姜丹丹)、Hong Peizhen(洪培真)、XuQiang(徐强)、Tang Zhaoyun(唐兆云)、Li Chunlong(李春龙)、Ye Tianchun(叶甜春) ,Impact of continuing scaling,Journal of on the device performance of 3D cylindrical junction-less charge trapping memorySemiconductors, 36(9), pp 094008-1-094008-6, 2015/9/1 ,EI    

12、 Xiaonan Yang、Zhiwei Zheng、Yan Wang、Zongliang Huo、Lei Jin、Dandan Jiang、Zhongyong Wang、ShengfenChiu、Hanming Wu、*Ming Liu ,Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR,IEEE ELECTRON DEVICE LETTERS, 36(1), pp 26-28, 2015/1/1 ,EI,SCI

13、Xiaonan Yang、Jing Liu、Zhiwei Zheng、Yan Wang、Dandan Jiang、Shengfen Chiu、Hanming Wu、*Ming Liu ,Impact of P/E Cycling on Read Current Fluctuation of NOR Flash Memory Cell: A Microscopic Perspective Based on Low ,2015 IEEE International Reliability Physics Symposium, 2015/4/14-2015/4/23, Frequency Noise Analysis 2015/4/14 ,ISTP

 

【基本信息】

所在部门: 通信工程学院

职  称: 副教授

出生年月: 198403

电子邮件:jdd@cuit.edu.cn

办公电话:028-85966249